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Aluminium oxide wafers
aos2182471.jpg
aos218_247_1.eps
aos218_247_1_.eps

Aluminium oxide wafers

AOS 218 247 1

TO 218, TO 247, 25 x 21 x 1.5 mm, other strengths and versions on request
  • thermal resistance: 
    0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
  • dielectric strength: 
    10 kV/mm
Price on application
Quantity
Comparison list
Data sheet
Features
for transistor:
TO 218
material:
AL2O3 - ceramics
thickness:
1.5 mm
specific electrical resistance:
>1014 Ω/cm
thermal conductivity:
25 W/m·K
dielectric constant:
9
linear expansion coefficient:
~8·10-6/K
flatness:
0.02 mm
thermal resistance:
0.3 K/W [at 1 inch2; = 6.45 cm2; = TO 3 (AOS 3 G)]
dielectric strength:
10 kV/mm
Technical Drawing
aos218_247_1.eps
Accessories / similar products
Accessory Product families:
11 - 14 (14)Number:
aos93_.eps
TO 93. Ø 9.5 x 2.3 mm, other strengths and versions on request
 
aos18_.eps
TO 18, Ø 8 x 1.5 mm, other strengths and versions on request
 
aos3_.eps
TO 3. 40.6 x 26.3 x 2.9 mm, other strengths and versions on request
 
aos66_.eps
TO 66. 33 x 19 x 2.5 mm, other strengths and versions on request
 
11 - 14 (14)Number:
Product family accessory of product family:
aos247_.eps
TO 247, 23 x 20 x 1 mm, other strengths and versions on request
 
aos218_247_.eps
TO 218, TO 247, 25 x 21 x 3 mm, other strengths and versions on request
 
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Drawing format (such as PDF, CAD)
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Technical explanations
Aluminium oxide wafers according to customer's instructions
Data sheet
Data sheet

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